SiC Schottky Diodes

Part Number : SHB601052FN

SiC SCHOTTKY RECTIFIER

DESCRIPTION: A 1200 VOLT, 5 AMP, SiC SCHOTTKY RECTIFIER


MAXIMUM RATINGS
CHARACTERISTICS SYMBOL CONDITION MAX UNITS
Peak Inverse Voltage VRWM 1200 V
Max. Average Forward Current IF(AV) Schottky, (SiC) Silicon Carbide Rectifier Bridge 5 A
Max. Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine wave pulsed (per leg) 100 A
Max. Thermal Resistance RθJC 1.2 °C/W
Max. Junction Temperature TJ 450 °C

Electrical Characteristics:
CHARACTERISTICS SYMBOL CONDITION MAX UNITS
Max. Forward Voltage Drop VF1 @5 A, Pulse, TJ = 25°C(per leg) 1.65@5A V
VF2 @5 A, Pulse, TJ = 125°C(per leg) 2.55@5A V
Max. Reverse Current IR1 @1200 V, Pulse, TJ = 25°C(per leg) 0.05 mA
IR1 @1200 V, Pulse, TJ = 125°C(per leg) 0.1 mA
Max. Junction Capacitance CT (see datasheet) 450 pF



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Mechanical Dimensions: In Inches / mm



Datasheets

 4290