DESCRIPTION: A 1200, Min VOLT, 20 AMP POWER SILICON CARBIDE Nch FET IN AN ISOLATED HERMETIC TO-257 PACKAGE, AVAILABLE SCREENED TO ANY REQUIRED LEVEL.

Features :

• Fast switching and reverse recovery
• Ceramic seals

MAXIMUM RATINGS ALL RATINGS ARE AT T_C = 25°C UNLESS OTHERWISE SPECIFIED.

RATING	SYMBOL	MAX	UNITS
DRAIN-SOURCE VOLTAGE	VDSS	1200	V
CONTINUOUS DRAIN CURRENT	VGS	20	A
PULSED DRAIN CURRENT (t ≤ 10μs, dc ≤ 1%)	ID pulse	80	A
GATE - SOURCE VOLTAGE	VGSS	?	V
MAXIMUM POWER DISSIPATION, TC = 25°C	Pd	120	W
MAXIMUM THERMAL RESISTANCE	RθJC	1.25	°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE	Top, Tstg	-55 to 150	°C

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC	MIN	TYP	MAX	UNITS
GATE THRESHOLD VOLTAGE (VDS = VGS)			-10 to 25	V
STATIC DRAIN – SOURCE ON - STATE RESISTANCE (@ ID(A))			0.11 @ 20	mΩ
FORWARD VOLTAGE		3.3V		V

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