DESCRIPTION: A 1200, Min VOLT, 31 AMP POWER SILICON CARBIDE Nch+Dio FET IN AN ISOLATED HERMETIC TO-254 PACKAGE, AVAILABLE SCREENED TO ANY REQUIRED LEVEL.

Features :

• Fast switching and reverse recovery
• Ceramic seals

MAXIMUM RATINGS ALL RATINGS ARE AT T_C = 25°C UNLESS OTHERWISE SPECIFIED.

RATING	SYMBOL	MAX	UNITS
DRAIN-SOURCE VOLTAGE	VDSS	1200	V
CONTINUOUS DRAIN CURRENT	VGS	31	A
PULSED DRAIN CURRENT (t ≤ 10μs, dc ≤ 1%)	ID pulse	80	A
GATE - SOURCE VOLTAGE	VGSS	4	V
MAXIMUM POWER DISSIPATION, TC = 25°C	Pd	150	W
MAXIMUM THERMAL RESISTANCE	RθJC	0.83	°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE	Top, Tstg	-55 to 150	°C

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC	MIN	TYP	MAX	UNITS
GATE THRESHOLD VOLTAGE (VDS = VGS)			-6 to 22	V
STATIC DRAIN – SOURCE ON - STATE RESISTANCE (@ ID(A))			0.125 @ 10	mΩ
FORWARD VOLTAGE		1.3V		V

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