Part Number : SHDC626812

HERMETIC SILICON CARBIDE FET

DESCRIPTION: A 1200, Min VOLT, 22 AMP POWER SILICON CARBIDE Nch FET IN AN ISOLATED HERMETIC TO-257 PACKAGE, AVAILABLE SCREENED TO ANY REQUIRED LEVEL.


Features :
  • Fast switching and reverse recovery
  • Ceramic seals

MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MAX UNITS
DRAIN-SOURCE VOLTAGE VDSS 1200 V
CONTINUOUS DRAIN CURRENT VGS 22 A
PULSED DRAIN CURRENT (t ≤ 10μs, dc ≤ 1%) ID pulse 80 A
GATE - SOURCE VOLTAGE VGSS 4 V
MAXIMUM POWER DISSIPATION, TC = 25°C Pd 75 W
MAXIMUM THERMAL RESISTANCE RθJC 1.67 °C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE Top, Tstg -55 to 150 °C

ELECTRICAL CHARACTERISTICS
CHARACTERISTIC MIN TYP MAX UNITS
GATE THRESHOLD VOLTAGE (VDS = VGS) -6 to 22 V
STATIC DRAIN – SOURCE ON - STATE RESISTANCE (@ ID(A)) 0.125 @ 10
FORWARD VOLTAGE 4.6V V



Request Quote

Disclaimer

Mechanical Dimensions: In Inches / mm



Datasheets

 5292