Features :

• 1000 Volts, 5.6 Amp MOSFET
• Isolated Hermetic, Ceramic Package
• Fast Switching
• Low R_DS(on)

MAXIMUM RATINGS ALL RATINGS ARE AT T_C = 25°C UNLESS OTHERWISE SPECIFIED.

RATING	SYMBOL	MIN	TYP	MAX	UNITS
DRAIN TO SOURCE VOLTAGE	VDS	-	-	1000	Volts
GATE TO SOURCE VOLTAGE	VGS	-	-	4	Volts
ON-STATE DRAIN CURRENT @ TC = 25°C	ID (on)	-	-	5.6	Amps
PULSED DRAIN CURRENT @ TC = 25°C	IDM	-	-		Amps
OPERATING AND STORAGE TEMPERATURE	TOP/TSTG	-55	-	150	°C
TOTAL DEVICE DISSIPATION @ TC = 25°C	PD	-	-	200	mW
THERMAL RESISTANCE, JUNCTION TO CASE	RthJC	-	-	0.6	°C/W

ELECTRICAL CHARACTERISTICS

RATING	SYMBOL	MIN	TYP	MAX	UNITS
STATIC DRAIN TO SOURCE ON STATE RESISTANCE@ ID (Amps)	RDS(ON)	-	-	2 @ 3.5	Ω

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