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New Design! 1200V, 60A SiC IPM

Designed using the latest generation of SiC FETs, this full bridge power module with an integrated gate drive uses power chip on board technology for optimal high-power density. Featuring a conduction cooled design, the 1200V, 60A complete module is low weight (1.1 oz) and low profile (0.02 in), ideal for high reliability applications requiring higher power efficiency in a compact package.
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