The SPG025N035P1B module uses the EPC2050, a 350 V rated GaN FET with 80 m? maximum RDS(on), 26 A peak current power in an extremely small chip-scale package that measures just 1.95 mm x 1.95 mm. The EPC2050 provides Sensitron with a high efficiency solution due to the low switching losses, and a high power density solution due to the extremely small size. The EPC2050 is also ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.
“We are delighted to be working with EPC. By using the ultra-small EPC2050 GaN FET, we could design a 350 V half bridge module with higher efficiency and 1/3rd the size of alternative silicon solutions allowing us to capture very high-density applications”, commented Richard Locarni, Director of New Business Development, Sensitron.
Alex Lidow, EPC’s CEO added, “This application is a great example of the real benefits that GaN brings. We have worked closely with Sensitron to find the best eGaN FET to meet the design challenges that the power-density requirements of their module demands.”