Part Number : SD001BP50B-R
SILICON BYPASS DIODE
| CHARACTERISTICS | SYMBOL | CONDITION | MIN | TYP | MAX | UNITS |
|---|---|---|---|---|---|---|
| Peak Inverse Voltage | VRWM | - | - | - | 50 | V |
| Max. Average Forward Current | IF(AV) | - | - | - | 1 | A |
| Max. Peak One Cycle Non-Repetitive Surge Current | IFSM | 8.3 ms, half Sine wave pulsed | - | - | 50 | A(pk) |
| Operating and Storage Temp | TOP & TSTG | 175 | 175 | °C | ||
| Max. Thermal Resistance | RθJC | - | - | °C/W |
| CHARACTERISTICS | SYMBOL | CONDITION | MIN | TYP | MAX | UNITS |
|---|---|---|---|---|---|---|
| Max. Forward Voltage Drop | VF1 | (see datasheet) | - | - | .8 | V |
| Max. Reverse Current | IR1 | @50 V T A= 25 °C |
- | - | 1 | uA |
5566