GaN Power Bridge Modules

Part Number : SPG025N035P1B

GaN Power Bridge Modules

Description: A 350 Volt, =120 AMP, GaN Power Bridge Modules


MAXIMUM RATINGS :
Characteristics Symbol Condition Max Units
Peak Inverse Voltage VRWM - 350 V
Max. Average Forward Current IF(AV) GaN FET Half-Bridge with Gate Driver 120 A
Max. Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine wave pulsed (per leg) A
Max. Thermal Resistance RθJC   2.5 °C/W
Max. Junction Temperature TJ - 150 °C

Electrical Characteristics :
Characteristics Symbol Condition Max Units
Max. Forward Voltage Drop VF1 @120 A, Pulse, TJ = 25°C(per leg) 1..5 V
VF2 @120 A, Pulse, TJ = 125°C(per leg) V
Max. Reverse Current IR1 @350V, Pulse, TJ = 25°C (per leg) 300 mA
IR2 @350V, Pulse, TJ = 125°C (per leg) mA
Max. Junction Capacitance CT (see datasheet) pF



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