IGBTs / Thyristors

Part Number : SHSMG1010


1200 VOLT, 70AMP IGBT DEVICE

HIGH SPEED, IMPROVED SCSOA

WITH FAST REVERSE RECOVERY DIODE



ELECTRICAL CHARACTERISTICS : (All parameters are at TA = 25°C unless otherwise specified)
PARAMETER SYMBOL MIN TYP MAX UNITS
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 µA, VGE = 0V
BVCES 1200 - - V
Continuous Collector Current TC = 25°C
TC = 90°C
IC - - 70
35
A
Pulsed Collector Current, 1mS ICM - - 70 V
Collector to Emitter Saturation Voltage,@ IC TC = 25°C
TC = 125°C
VCE(SAT) - 4
4 @ 35
4 @ 35
35
V
Input Capacitance Cies - 3900 - pF
Fall Time Tf -
-
-
-
-
500 -
-
-
-
-
 
nsec
 
mJ
mJ
Maximum Thermal Resistance RθJC - - 0.31 °C/W



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Mechanical Dimensions: In Inches / mm



Datasheets

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