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350V, 20A GaN Half Bridge IPM

Sensitron designed a GaN half bridge with an integrated gate drive using the latest generation of GaN FETs. The ultra small, lightweight package (1.10" x 0.70" x 0.14") uses power flip chip on board with topside cooling, allowing for optimal thermal performance and high power density. Available in various package options or custom bridge configurations, contact us for your design requirements.
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