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Power Bridges with Advanced Lightweight Packaging

Products > Product Line > Motor Controllers
 

Three Phase IGBT or MOSFET Bridges with SiC Diodes

Product Features:
  • 600V & 1200V, 15A to 150A
  • Options for integrated gate resistors, brake switches, brake resistors, thermistors
  • Low profile, lightweight construction
  • Superior fatigue resistance & superior temperature cycling
  • Integrated G-E & G-S resistors for higher ESD immunity
  • Integrated brake resistor with direct heat transfer to base
  • RTD to monitor module temperature
  • Part Number: SPM Series
  • For more information, contact us at sales@sensitron.com

P/N

PIV, 25oC (V)

Io, 25oC (A)

RθJC (C/WoC)

Features

Packaging

Base

SPM1001

600

50

1.0

3-PH IGBT Bridge with SiC Diodes, Brake MOSFET and Integrated Brake Resistor

AlSiC

SPM1002

600

30

1.0

3-PH IGBT Bridge with SiC Diodes, Brake MOSFET and Integrated Brake Resistor

AlSiC

SPM1003

1200

150

0.42

3-Ph IGBT Bridge Brake IGBT + Inrush SCR

AlSiC

SPM1004

1200

150

0.42

3-Ph IGBT Bridge Brake IGBT + High Side Brake IGBT

AlSiC

SPM1005

600

30

3

Low Loss Ultrafast IGBT 3-Ph Bridge Module with SiC Freewheeling Diodes

AIN

SPM1006

600

60

2

Low Loss Ultrafast IGBT 3-Ph Bridge Module

AIN

SPM1007

1200

29

1.7

3-Ph SiC MOSFET Bridge with SiC Diodes, Hi Temp

AIN

SPM1008

1200

30

1.0

3-Ph SiC MOSFET Bridge

AIN

SPM1009

600

30

3

Low Loss Ultrafast IGBT 3-Ph Bridge Module, Ultrafast Freewheeling Diodes

AIN

3-Phase IGBT Bridge with Brake IGBT plus 3-Ph Bridge Rectifier with Inrush SCR
Product Features:
  • 1200V, 150 Amp, Three phase bridge
  • 1200V, 133A SCR input bridges with 63A diodes
    • (P/N:/ SCM1001)
  • 1200V, 32A SCR for half controlled bridge with 80A diodes
    • (P/N:/ SHM1001)
  • Upper & lower regenerative brake IGBT switches
  • Near hermetic construction
  • AlSiC baseplate for superior temperature cycling capability
  • Standard flying lead I/O with operational D-Sub connectors, allowing control board wiring without bus bar interference
  • Use of 4th generation IGBT and diodes for reduced IGBT and switching losses
  • RTD to monitor module temperature
  • For more information, contact us at sales@sensitron.com

 For different configurations, please contact us at: sales@sensitron.com

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